Conference

2017

W. H. Han, Sunghyun Kim, In-Ho Lee, and K. J. Chang, “Pressure-induced transition pathway from α-B to γ-B” (ORAL), 2017 Korean Physical Society spring meeting, Daejeon, Korea [Apr, 19-21, 2017]

W. H. Han, In-Ho Lee and K. J. Chang, “High-dimensional artificial neural network potentials for boron and its application to searching for new structures”(ORAL), 2017 APS March meeting, New Orleans, Louisiana, USA [Mar, 13-17, 2017]

2016

G.-M. Kim, Y. J. Oh, and K. J. Chang, “The effect of Al atoms on the effective work function at TiN/HfO2 interfac”(Poster), The 19th Asian Workshop on First-Principles Electronic Structure Calculations, Hsinchu, Taiwan, [Nov, 2, 2016]

Sunghyun Kim, Young Jun Oh, In-Ho Lee, Jooyoung Lee, and K. J. Chang, “Computational Design of Direct Band Gap Carbon Superlattices with Efficient Optical Transition”(Poster), The 19th Asian Workshop on First-Principles Electronic Structure Calculations, Hsinchu, Taiwan, [Nov, 2, 2016]

Sunghyun Kim and K. J. Chang, “First-Principles Band Unfolding Method for Nanowires”(Poster), The 19th Asian Workshop on First-Principles Electronic Structure Calculations, Hsinchu, Taiwan, [Nov, 2, 2016]

W. H. Han, In-Ho Lee, and K. J. Chang, “High-Dimensional Artificial Neural Network Potentials for Elemental Boron”(Poster), The 19th Asian Workshop on First-Principles Electronic Structure Calculations, Hsinchu, Taiwan, [Nov, 2, 2016]

In-Ho Lee, W. H. Han, and K. J. Chang. “Generation of the neural network potential of elemental boron from machine learning”(Oral), Korean Physical Society Fall Meeting, Gwangju, Korea, [Oct, 19, 2016]

W. H. Han and K. J. Chang, “Electronic structure of disorder-induced cation defects in amorphous oxide semiconductors”(Poster), 33rd International Conference on the Physics of Semiconductors, Beijing, China, [Aug, 1, 2016]

Sunghyun Kim, Young Jun Oh, In-Ho Lee, Jooyoung Lee, and K. J. Chang,“Computational discovery of direct band gap silicon superlattices with efficient optical transition” (Poster), 33rd International Conference on the Physics of Semiconductors, Beijing, China, [Aug, 3, 2016]

G.-M. Kim, Y. J. Oh, and K. J. Chang,“The effect of Al doping on effective work function in metal/HfO2 interfaces”(Poster), 33rd International Conference on the Physics of Semiconductors, Beijing, China, [Aug, 3, 2016]

Sunghyun Kim, Young Jun Oh, In-Ho Lee, Jooyoung Lee, and K. J. Chang, “Computational search for dipole‐allowed direct band gap silicon allotropes based on global optimization” (Oral), The 18th International Symposium on the Physics of Semiconductors and Applications, Jeju, Korea, [July, 6, 2016]

W. H. Han and K. J. Chang, “The atomic and electronic properties of coordination defects in amorphous oxide semiconductors”(Oral), The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA), Jeju, Korea, [July, 4, 2016]

G.-M. Kim Y. J. Oh, and K. J. Chang, “The effect of Si impurities on the effective work function at TiN/t-HfO2 interface”(Poster), The 12th KIAS Electronic Structure Calculation Workshop, Seoul, Korea, [June, 16, 2016]

W. H. Han and K. J. Chang, “The electronic structure of undercoordinated cation defects in amorphous oxide semiconductors”(Poster), The 12th KIAS Electronic Structure Calculation Workshop, Seoul, Korea, [June, 16, 2016]

Elisabeth Pratidhina, Sunghyun Kim, and Kee Joo Chang, “Ge/Sn core-shell nanowires with direct band gaps: A first-principles study”(Poster), 2016, The 12th KIAS Electronic Structure Calculation Workshop, Seoul, Korea [June, 16-17, 2016]

Sunghyun Kim, Young Jun Oh, In-Ho Lee, Jooyoung Lee, and K. J. Chang, “Direct band gap carbon allotropes with efficient optical transition via first-principles materials design”(Poster), The 12th KIAS Electronic Structure Calculation Workshop, Seoul, Korea, [June, 16, 2016]

Sunghyun Kim, Young Jun Oh, In-Ho Lee, Jooyoung Lee, and K. J. Chang, “Computational search for direct band gap carbon allotropes with efficient optical transition” (Oral), Korean Physical Society Spring Meeting, Daejon, Korea [April, 21-23, 2016]

Elisabeth Pratidhina, Sunghyun Kim, and Kee Joo Chang, “First Principles Study on the Electronic Properties of Ge/Sn Core-Shell Nanowires” (Oral), Korean Physical Society Spring Meeting, Daejon, Korea [April, 21-23, 2016]

W. H. Han and K. J. Chang, “Electronic structure of undercoordinated cation defects in amorphous oxide semiconductors” (ORAL), 2016 Korean Physical Society spring meeting, Daejeon, Korea [Apr, 20-22, 2016]

Sunghyun Kim, Young Jun Oh, In-Ho Lee, Jooyoung Lee, and K. J. Chang, “Prediction of direct band gap silicon superlattices with dipole-allowed optical transition” (Oral), 2016 APS March meeting, Baltimore, MD, USA [Mar, 16, 2016]

W. H. Han and K. J. Chang, “Electronic structure of intrinsic defects in non-stoichiometric amorphous In-Ga-Zn-O semiconductors”(ORAL), 2016 APS March meeting, Baltimore, Maryland, USA [Mar, 15, 2016]

G.-M. Kim Y. J. Oh, and K. J. Chang, “The effect of Si impurities on the effective work function at TiN/tetragonal-HfO2 interface” (ORAL), 2016 APS March meeting, Baltimore, Maryland, USA [Mar, 18, 2016]

2015

D.-H. Choe, H.-J. Sung, S. W. Kim, Y. H. Lee, H. Yang, and K. J. Chang, “Polymorphism of two-dimensional MoTe2 : A density functional study (POSTER)”, NT15, Nagoya, Japan, Jun. 29 – Jul. 3, (2015).

D.-H. Choe, H.-J. Sung, and K. J. Chang, “Bandgap opening in monolayer MoTe2 with distorted octahedral phase (POSTER)”, The 11th KIAS Electronic Structure Calculation Workshop, Seoul, Korea, Jun. 18 – 19, (2015).

D.-H. Choe and K. J. Chang (invited), “Transport and magnetic properties of graphene systems”, The 2nd Muju International Winter School Series (MIWS2), Muju, Korea, Jan. 25 – 31, (2015).

D.-H. Choe, H.-J. Sung, and K. J. Chang, “Structural and electronic properties of distorted octahedral MoTe2 (POSTER)”, The 2nd Muju International Winter School Series (MIWS2), Muju, Korea, Jan. 25 – 31, (2015).

D.-H. Choe, H.-J. Sung, S. W. Kim, Y. H. Lee, H. Yang, and K. J. Chang, KPS Spring Meeting, Daejeon, Korea, Apr. 22 – 24, (2015), “Atomic and electronic properties of monolayer MoTe2.”

D.-H. Choe, H.-J. Sung, and K. J. Chang, APS March Meeting, San Antonio, TX, USA, Mar. 2 – 6, (2015), “Structural phase transitions in monolayer molybdenum dichalcogenides.”

Sunghyun Kim,Young Jun Oh, In-Ho Lee, Jooyoung Lee, and K. J. Chang, “Computational Design of Silicon Allotropes with Direct Band Gaps”, The 3rd International Conference on Advanced Electromaterials, ICC Jeju, Korea [Nov, 17-20, 2015]

Woo Hyun Han,Young Jun Oh, and K. J. Chang, “The electronic structure of oxygen-related defects in non-stoichiometric amorphous In-Ga-Zn-O”, The 3rd International Conference on Advanced Electromaterials, ICC Jeju, Korea [Nov, 17-20, 2015]

Woo Hyun Han and K. J. Chang, “Eletronic structure of non-stoichiometric amorphous In-Ga-Zn-O semiconductors”, The 18th Asian Workshop on First-Principles Electronic Structure Calculations, Kashiwa, Japan [Nov, 9-11, 2015]

Sunghyun Kim,Young Jun Oh, In-Ho Lee, Jooyoung Lee, and K. J. Chang, “Computational design of direct band gap Si superlattices”(Poster), The 18th Asian Workshop on First-Principles Electronic Structure Calculations, Kashiwa, Japan [Nov, 9-11, 2015]

Geun-Myeong Kim, Young Jun Oh, and K. J. Chang, “The effect of Si impurities on the Schottky barrier height at TiN/tetragonal-HfO2 interface”, The 18th Asian Workshop on First-Principles Electronic Structure Calculations, Kashiwa, Japan [Nov, 9-11, 2015]

Woo Hyun Han, Young Jun Oh, and Kee Joo Chang, “Atomic and electronic structure of non-stoichiometric amorphous In-Ga-Zn-O semiconductors”(ORAL), 2015 Korean Physical Society fall meeting, Gyeongju, Korea [Oct, 21-23, 2015]

Geun-Myeong Kim, Young Jun Oh, and Kee Joo Chang, “The effect of Si impurities on the Schottky barrier height and effective work function at TiN/t-HfO2 interface”(ORAL), 2015 Korean Physical Society fall meeting, Gyeongju, Korea [Oct, 21-23, 2015]

Woo Hyun Han, Young Jun Oh, and K. J. Chang, “Electronic structure of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors “(poster), 2015 28th International Conference on Defects in Semiconductors, Espoo, Finland [July 27 – 31, 2015]

Geun-Myeong Kim, Young Jun Oh, and K. J. Chang, “The effect of Al impurities on the effective work function at metal/HfO2 interfaces”(poster), 2015 28th International Conference on Defects in Semiconductors, Espoo, Finland [July 27 – 31, 2015]

Sunghyun Kim, In-Ho Lee, Jooyoung Lee, Young Jun Oh, and K. J. Chang, “Implementation of a Conformational Space Annealing Algorithm in Computational Search for Functional Materials”(Poster), The 11th KIAS Electronic Structure Calculation Workshop, Seoul, Korea, [June, 19, 2015]

Geun-Myeong Kim, Young Jun Oh, and K. J. Chang, “The effect of Al impurities on the work function at metal/HfO2 interface”(Poster), The 11th KIAS Electronic Structure Calculation Workshop, Seoul, Korea, [June, 19, 2015]

Sunghyun Kim, In-Ho Lee, Jooyoung Lee, Young Jun Oh, and K. J. Chang, “Implementation of a Conformational Space Annealing Algorithm in Computational Search for Functional Materials”(ORAL), 2015 Korean Physical Society spring meeting, Daejeon, Korea [Apr, 24, 2015]

Young Jun Oh, In-Ho Lee, Jooyoung Lee, Sunghyun Kim, and K. J. Chang, “Computational design of silicon allotropes with direct band gaps”(ORAL), 2015 Korean Physical Society spring meeting, Daejeon, Korea [Apr, 24, 2015]

Geun-Myeong Kim, Young Jun Oh, and K. J. Chang, “Schottky barrier heights and effective work functions at various TiAlN/HfO2 interface”(ORAL), 2015 Korean Physical Society spring meeting, Daejeon, Korea [Apr, 24, 2015]

Ha-Jun Sung, Duk-Hyun Choe and K. J. Chang, “The effects of surface polarity and dangling bonds on the electronic properties of MoS2 on SiO2″(Oral), 2015 APS March meeting, San Antonio, TX, USA [Mar, 2, 2015]

Woo Hyun Han, Young Jun Oh, and K. J. Chang, “A hybrid functional study of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors”(ORAL), 2015 APS March meeting, San Antonio, TX, USA [Mar, 2, 2015]

Sunghyun Kim, In-Ho Lee, Jooyoung Lee, Young Jun Oh, and K. J. Chang, “Conformational space annealing scheme in the inverse design of functional materials”(Oral), 2015 APS March meeting, San Antonio, TX, USA [Mar, 2, 2015]

Geun-Myeong Kim, Young Jun Oh, and K. J. Chang, “The effect of Al content on the work function engineering at TiAlN/HfO2 interface”(Oral), 2015 APS March meeting, San Antonio, TX, USA [Mar, 2, 2015]

Young Jun Oh, In-Ho Lee, Jooyoung Lee, Sunghyun Kim, and K. J. Chang, “Direct band gap silicon crystals predicted by an inverse design method”(Oral), 2015 APS March meeting, San Antonio, TX, USA [Mar, 2, 2015]

2014

Geun-Myeong Kim, Young Jun Oh, Chang Hwi Lee and Kee Joo Chang, “Migration Pathways and Barrier for B diffusion in SiO2 and SiGe/SiO2 interfaces”(ORAL), 2014 The 17th International Symposium Physics of semiconductors and Applications, Jeju, Korea [Dec, 7-11, 2014]

Woo Hyun Han, Young Jun Oh, and Kee Joo Chang, “The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors”(ORAL), 2014 The 17th International Symposium Physics of semiconductors and Applications, Jeju, Korea [Dec, 7-11, 2014]

Duk-Hyun Choe, Ha-Jun Sung and Kee Joo Chang, “Structural and electronic properties of MoX2 (X=S, Te)”(ORAL), 2014 The 17th International Symposium Physics of semiconductors and Applications, Jeju, Korea [Dec, 7-11, 2014]

Geun-Myeong Kim, Young Jun Oh, and Kee Joo Chang, “The Effects of C and F Impurities on the Schottky Barrier Height at TiN/HfO2 Interface”(ORAL), 2014 Korean Physical Society fall meeting, Gwangju, Korea [Oct, 22-24, 2014]

Woo Hyun Han, Young Jun Oh, and Kee Joo Chang, “Hybrid functional calculations for the capture process of electrons by oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors”(ORAL), 2014 Korean Physical Society fall meeting, Gwangju, Korea [Oct, 22-24, 2014]

Geun-Myeong Kim, Young Jun Oh, and Kee Joo Chang, “The effects of C and F impurities on the Schottky barrier height and effective work function at TiN/HfO2 interface”(POSTER), The 17th Asian Workshop on First-Principles Electronic Structure Calculations, Seoul, Korea [Nov, 3-5, 2014]

Woo Hyun Han, Young Jun Oh, and Kee Joo Chang, “The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors”(POSTER), The 17th Asian Workshop on First-Principles Electronic Structure Calculations, Seoul, Korea [Nov, 3-5, 2014]

Sunghyun Kim, Ji-Sang Park, and K. J. Chang, “Finite-zsize supercell correction scheme for the formation energy of charged defects in silicon nanowires”(POSTER), The 17th Asian Workshop on First-Principles Electronic Structure Calculations, Seoul, Korea [Nov, 3-5, 2014]

Ha-Jun Sung, Duk-Hyun Choe and K. J. Chang, “Electronic structure and valley polarization of monolayer and bilayer MoS2 on SiO2″(ORAL), 2014 32nd International Conference on the Physics of Semiconductors, Austin, TX, USA [Aug, 10-15, 2014]

Duk-Hyun Choe and K. J. Chang, “The universal conductance fluctuations in the presence of spin-orbit interactions in graphene”(ORAL), 2014 32nd International Conference on the Physics of Semiconductors, Austin, TX, USA [Aug, 10-15, 2014]

Geun-Myeong Kim, Young Jun Oh, Chang Hwi Lee and K. J. Chang, “Migration pathways and barriers for B diffusion at Si/SiO2 and SiGe/SiO2 interfaces”(POSTER), 2014 32nd International Conference on the Physics of Semiconductors, Austin, TX, USA [Aug, 10-15, 2014]

Sunghyun Kim, Ji-Sang Park, and K. J. Chang, “Determination of Accurate Transition Levels of Charged Defects in Silicon Nanowires”(POSTER), 2014 32nd International Conference on the Physics of Semiconductors, Austin, TX, USA [Aug, 10-15, 2014]

Young Jun Oh, Woo Hyun Han, Hyeon-Kyun Noh, and K. J. Chang, “Role of oxygen-related defects in the instability of amorphous In-Ga-Zn-O based thin film transistors”(POSTER), 2014 32nd International Conference on the Physics of Semiconductors, Austin, TX, USA [Aug, 10-15, 2014]

Duk-Hyun Choe and K. J. Chang, “Effect of spin-orbit interactions on the transport properties of graphene topological insulators”(POSTER), The 10th KIAS Electronic Structure Calculation Workshop, Seoul, Korea [Jun, 19-20, 2014]

Woo Hyun Han, Young Jun Oh, and Kee Joo Chang, “The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors”(POSTER), The 10th KIAS Electronic Structure Calculation Workshop, Seoul, Korea [Jun, 19-20, 2014]

Ha-Jun Sung, Duk-Hyun Choe and K. J. Chang, “Electronic structure of monolayer and bilayer MoS2 on SiO2″(POSTER), The 10th KIAS Electronic Structure Calculation Workshop, Seoul, Korea [Jun, 19-20, 2014]

Woo Hyun Han, Young Jun Oh, and Kee Joo Chang, “The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors”(ORAL), Korean Physical Society spring meeting, Deajeon, Korea [Apr, 23-25, 2014]

Ha-Jun Sung, Duk-Hyun Choe and K. J. Chang, “The Electronic Properties of Mos2 Supported on SiO2 Substrate”(ORAL), Korean Physical Society spring meeting, Deajeon, Korea [Apr, 23-25, 2014]

Geun-Myeong Kim, Young Jun Oh, Chang Hwi Lee and K. J. Chang, “Boron diffusion mechanism and effect of interface Ge atoms in Si/SiO2 and SiGe/SiO2 interfaces “, 2014 APS march meeting, Denver, CO, USA [Mar, 3-7, 2014]

Duk-Hyun Choe and K. J. Chang, “Effect of spin-orbit interaction on the conductance fluctuation in disordered graphene”, 2014 APS march meeting, Denver, CO, USA [Mar, 3-7, 2014]

Young Jun Oh, Alex Taekyung Lee, Hyeon-Kyun Noh, and K. J. Chang, “Hybrid functional and quasiparticle calculations of the Schottky barrier height at TiN/HfO2 interface”(ORAL), 2014 APS march meeting, Denver, CO, USA [Mar, 3-7, 2014]

Sunghyun Kim, Ji-Sang Park, and K. J. Chang, “A finite-size supercell correction scheme for charged defects in one-dimensional systems: Application to impurities in silicon nanowires”, 2014 APS march meeting, Denver, CO, USA [Mar, 3-7, 2014]

Woo Hyun Han, Young Jun Oh, and Kee Joo Chang, “The electronic properties of oxygen-related defects in amorphous In-Ga-Zn-O semiconductors”(POSTER), 2014 제10차 강유전체연합심포지엄, 무주, Korea [Feb, 16-17, 2014]

2013

Young Jun Oh, Alex Taekyung Lee, Hyeon-Kyun Noh, and K. J. Chang, “Many-body quasiparticle and hybrid functional calculations of the Schottky barrier height at TiN/HfO2 interface”(POSTER), 2013 16th Asian Workshop on First-Principles Electronic Structure Calculations, Beijing, PRC [Oct, 28-30, 2013]

Ji-Sang Park, Sunghyun Kim, and K. J. Chang, “Local bonding effect on p-type doping efficiency in Mg-doped quaternary AlInGaN alloys”(POSTER), 2013 16th Asian Workshop on First-Principles Electronic Structure Calculations, Beijing, PRC [Oct, 28-30, 2013]

Duk-Hyun Choe and K. J. Chang, “Localization and dimensional crossover behavior of conductance in hydrogenated graphene and graphene nanoribbons”, The 16th International Symposium on the Physics of Semiconductors and Applications, Jeju, Korea [Jul, 2-5, 2013]

Sunghyun Kim, Ji-Sang Park, and K. J. Chang, “Generation of realistic atomic models for Si/SiO2 core-shell nanowires and segregation behavior of B and P dopants”, The 16th International Symposium on the Physics of Semiconductors and Applications, Jeju, Korea [Jul, 2-5, 2013]

Young Jun Oh, Hyeon-Kyun Noh, and K. J. Chang, “Electric-field-induced drift motion of charged oxygen vacancy in amorphous In-Ga-Zn-O semiconductors”(POSTER), The 16th International Symposium on the Physics of Semiconductors and Applications, Jeju, Korea [Jul, 2-5, 2013]

Duk-Hyun Choe and K. J. Chang, “Effect of dimensionality on the localization behavior in hydrogenated graphene”, The 14th International Conference on the Formation of Semiconductor Interfaces, Kyeong-Ju, Korea [Jun, 30- Jul, 5, 2013]

Duk-Hyun Choe and K. J. Chang, “Scaling of conductance fluctuations in hydrogenated graphene nanoribbons”(POSTER), The 9th KIAS Electronic Structure Calculation Workshop, Seoul, Korea [Jun, 20-21, 2013]

Young Jun Oh, Alex Taekyung Lee, Hyeon-Kyun Noh, and K. J. Chang, “Hybrid functional and quasiparticle calculations on effective work function of TiN on HfO2″(POSTER), The 9th KIAS Electronic Structure Calculation Workshop, Seoul, Korea [Jun, 20-21, 2013]

Sunghyun Kim, Ji-Sang Park, and K. J. Chang, “Stability of B and P dopants in Si/SiO2 core-shell nanowires”(POSTER), The 9th KIAS Electronic Structure Calculation Workshop, Seoul, Korea [Jun, 20-21, 2013]

Duk-Hyun Choe and K. J. Chang, **”Effect of dimensionality on the conductance fluctuation behavior in hydrogenated graphene systems”, Korean Physical Society spring meeting, Deajeon, Korea [Apr, 24-26, 2013]

Young Jun Oh, Alex Taekyung Lee, Hyeon-Kyun Noh, and K. J. Chang, “Quasiparticle GW calculations of the effective work function at TiN/HfO2 interface”(ORAL), 2012 Fall Korean Physical Society spring meeting, Changwon, Korea [Oct, 30-Nov, 1, 2012]

Sunghyun Kim, Ji-Sang Park, and K. J. Chang, **”First-principles study for segregation of B and P dopants in Si/SiO2 core-shell nanowires”, Korean Physical Society spring meeting, Deajeon, Korea [Apr, 24-26, 2013]

Duk-Hyun Choe and K. J. Chang, “Conductance fluctuation and dimensional crossover in hydrogenated graphene systems”, APS March meeting, Baltimore, MD, USA [Mar, 18-22, 2013]

Sunghyun Kim, Ji-Sang Park, and K. J. Chang, “Generation of core-shell structures and segregation of dopants in Si/SiO2 nanowires”, APS March meeting, Baltimore, MD, USA [Mar, 18-22, 2013]

2012

Young Jun Oh, Hyeon-Kyun Noh, Alex Taekyung Lee, and K. J. Chang, “Determination of the Schottky barrier height and effective work function at TiN/HfO2 interface”(POSTER), 2012 Fall Korean Physical Society spring meeting, Pyeongchang, Korea [Oct, 24-26, 2012]

Young Jun Oh, Geun-Myung Kim, Hyeon-Kyun Noh, and K. J. Chang, “First-principles Study of B Diffusion at the Si/SiO2 Interface”(ORAL), IUMRS-ICA 2012, Busan, Korea [Aug. 26-Aug. 31, 2012]

Young Jun Oh, Hyeon-Kyun Noh, Geun-myung Kim, and K. J. Chang, “Mechanisms for boron diffusion and segregation at the Si/SiO2 interface”(POSTER), The International Conference on the Physics of Semiconductors 2012, Zurich, Switzerland [Jul, 29-Aug. 3, 2012]

Young Jun Oh, Hyeon-Kyun Noh, Geun-myung Kim, and K. J. Chang, “Segregation and diffusion of boron dopants in the Si/SiO2 interface”(ORAL), APS March meeting 2012, Boston, MA, USA [Feb, 27-Mar. 2, 2012]

2011

Young Jun Oh, Hyeon-Kyun Noh, and K. J. Chang, “Boron segregation and effect of point defects in Si/SiO2 interface”(POSTER), 2011 14th Asian Workshop on First-Principles Electronic Structure Calculations, Tokyo, Japan [Oct, 31-Nov. 2, 2011]

Young Jun Oh, Hyeon-Kyun Noh, and K. J. Chang, “First-principles study of the segregation of boron dopants in Si/SiO2 interface”(POSTER), The 26th International Conference on Defects in Semiconductors 2011, Nelson, New Zealand [Jul, 17-22, 2011]

Young Jun Oh, Hyeon-Kyun Noh, and K. J. Chang, “Segregation of B dopants in Si/SiO2 interface”(POSTER), The 7th KIAS Electronic Structure Calculation Workshop, Seoul, Korea [Jun, 23-24, 2011]

Young Jun Oh, Jin-Heui Hwang, Hyeon-Kyun Noh, Junhyeok Bang, Byungki Ryu, and K. J. Chang, “Stability and Segregation of Boron Dopants at the Si/SiO2 Interface”(ORAL), 2011 MRS Spring Meeting & Exhibit, San Francisco, CA, USA [Apr, 25-29, 2011]

Young Jun Oh, Hyeon-Kyun Noh, and K. J. Chang, “Stability of boron dopants at the interface between Si and amorphous SiO2″(POSTER), 2011 3rd ACCMS Working Group Meeting on Advances in Nano-device Simulation, Jeju, Korea [Mar, 31-Apr. 2, 2011]

Young Jun Oh, Jin-Heui Hwang, Hyeon-Kyun Noh, Junhyeok Bang, Byungki Ryu, and K. J. Chang, “Stability of boron dopants near the Si/SiO2 interface”(POSTER), 2011 The 18th Korean Conference on Semiconductors, Jeju, Korea [Feb, 16-18, 2011]

2010

Young Jun Oh, Jin-Heui Hwang, Hyeon-Kyun Noh, Junhyeok Bang, Byungki Ryu, and K. J. Chang, “Diffusion and segregation of B dopants at Si/SiO2 interface”(POSTER), 2010 13th Asian Workshop on First-Principles Electronic Structure Calculations, Pohang, Korea [Nov, 1-3, 2010]

Young Jun Oh, Byungki Ryu, and K. J. Chang, “First-principles study of boron segregation at Si/SiO2 interface”(ORAL), 2010 Fall Korean Physical Society spring meeting, Pyeongchang, Korea [Oct, 20-22, 2010]

Young Jun Oh, Jin-Heui Hwang, Hyeon-Kyun Noh, Junhyeok Bang, Byungki Ryu, and K. J. Chang, “Ab initio study of boron segregation and deactivation at Si/SiO2 interface”(ORAL), 2010 IUMRS-ICEM, Goyang, Gyeonggi-do, Korea [Aug, 22-27, 2010]

Young Jun Oh, Jin-Heui Hwang, Hyeon-Kyun Noh, Junhyeok Bang, Byungki Ryu, and K. J. Chang, “Segregation of B dopants in Si/SiO2 interface”(POSTER), The 6th KIAS Electronic Structure Calculation Workshop, Seoul, Korea [Jun, 21-22, 2010]

2009

Young Jun Oh, Byungki Ryu, and K. J. Chang, “The electronic structure of lithium silicides”(POSTER), 2009 12th Asian Workshop on First-Principles Electronic Structure Calculations, Beijing, PRC [Oct, 26-28, 2009]

Young Jun Oh, Byungki Ryu, and K. J. Chang, “First Principles Study of the Electronic Structure of Lithium Silicides”(ORAL), 2009 Fall Korean Physical Society spring meeting, Changwon, Korea [Oct, 21-23, 2009]