Publication

2017

  1. H.-J. Sung, S. Kim, I.-H. Lee, and K. J. Chang, “Semimetallic carbon allotrope with topological nodal line in mixed sp2-sp3 bonding networks”, NPG Asia Materials 9, e361

  2. W. H. Han, Y. J. Oh, D.-H. Choe, S. Kim, I.-H. Lee, K. J. Chang, “Three-dimensional buckled honeycomb boron lattice with vacancies as an intermediate phase on the transition pathway from α-B to γ-B.”, NPG Asia Materials 9, e400 (2017)

  3. S. Kim, W. H. Han, I.-H. Lee, K. J. Chang, “Boron Triangular Kagome Lattice with Half-Metallic Ferromagnetism”, Sci. Rep. accepted (2017)

  4. S. Cho, S. H. Kang, H. S. Yu, H. W. Kim, W. Ko, S. W. Hwang, W. H. Han, D.-H. Choe, K. J. Chang, Y. H. Lee, H. Yang, S. W. Kim, “Te vacancy-driven superconductivity in orthorhombic molybdenum ditelluride.”, 2D Mater. 4, 021030 (2017)

  5. S. Kim, S. Song, J. Park, H. Yu, S. Cho, D. Kim, J. Baik, D.-H. Choe, K. J. Chang, Y. H. Lee, S. W. Kim, H. Yang, “Long-Range Lattice Engineering of MoTe2 by a 2D Electride”, Nano Lett. 17, 3363 (2017)

  6. W. H. Han, S. Kim, I.-H. Lee, K. J. Chang, “A New Phosphorus Allotrope with Direct Band Gap and High Mobility”, arXiv: 1705.05073 (2017)

2016

  1. Elisabeth Pratidhina, Sunghyun Kim, and K. J. Chang, “Design of Dipole-Allowed Direct Band Gaps in Ge/Sn Core–Shell Nanowires”, J. Phys. Chem. C 120, 28169

  2. H.-J. Sung, D.-H. Choe, and K. J. Chang, “Tuning Dirac points by strain in MoX2 nanoribbons (X=S, Se, Te) with 1T’ structure”, Phys. Chem. Chem. Phys. 18, 16361

  3. I. -H. Lee, Y. J. Oh, S. Kim, J. Lee, and K. J. Chang, “Ab initio materials design using conformational space annealing and its application to searching for direct band gap silicon crystals”, Comp. Phys. Comm. 203, 110.

  4. Y. J. Oh, S. Kim, I. -H. Lee, J. Lee, and K. J. Chang, “Direct band gap carbon superlattices with efficient optical transition”, Phys. Rev. B 93, 085201.

  5. D.-H. Choe, H.-J. Sung, and K. J. Chang, “Understanding topological phase transition in transition metal dichalcogenides”, Phys. Rev. B 93, 125109.

  6. G.-M. Kim, Y. J. Oh and K. J. Chang, “The effect of Al segregation on Schottky barrier height and effective work function in TiAl/TiN/HfO2 gate stacks”.J. Phys. D: Appl. Phys. 49, 275104

  7. W. H. Han and K, J. Chang, “Subgap States near the Conduction-Band Edge Due to Undercoordinated Cations in Amorphous In-Ga-Zn-O and Zn-Sn-O Semiconductors”, Phys. Rev. Applied 6, 044011 (2016)

2015

  1. W. H. Han, Young Jun Oh, Ji-Sang Park, and K. J. Chang, “Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior”, Phys. Rev. Applied. 3, 044008. (2015)

  2. Y. J. Oh, I.-H. Lee, S. Kim, J. Lee, and K. J. Chang, “Dipole-allowed direct band gap silicon superlattices”, Sci. Rep. 5, 18086. (2015)

  3. S. Cho, S. Kim, J. H. Kim, J. Zhao, J. Seok, D. Keum, J. Baik, D.-H. Choe, K. J. Chang, K. Suenaga, S. W. Kim, Y. H. Lee and H. Yang, “Phase patterning for ohmic homojunction contact in MoTe2. “ Science 349, 625. (2015)

  4. D.-H. Choe and K. J. Chang, “Universal conductance fluctuation in 2D topological insulators.”, Sci. Rep., 5, 10997 (2015)

  5. Y. J. Oh, H.-K. Noh, and K. J. Chang, “The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors “, Sci. Tech. Adv. Mater. 16, 034902 (2015).

  6. D. Keum, S. Cho, J. H. Kim, D.-H. Choe, H.-J. Sung, M. Kan, H. Kang, J.-Y. Hwang, S. W. Kim, H. Yang, K. J. Chang, and Y. H. Lee, “Band gap opening in few-layered monoclinic MoTe2.”, Nature Phys. 11, 482. (2015)

  7. S. H. Song, B. H. Kim, D.-H. Choe, J. Kim, D. C. Kim, D. J. Lee, J. M. Kim, K. J. Chang, and S. Jeon, “Band gap widening of phase quilted, 2D MoS2 by oxidative intercalation.” Adv. Mater. 27, 3152. (2015)

2014

  1. Chang Hwi Lee, Geun-Myeong Kim, Young Jun Oh, and K. J. Chang, “Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface”, Curr. Appl. Phys. 14, 1557.

  2. In-Ho Lee, Jooyoung Lee, Young Jun Oh, Sunghyun Kim, and K. J. Chang, “Computational search for direct band gap silicon crystals”, Phys. Rev. B 90, 115209.

  3. Sunghyun Kim, Ji-Sang Park, and K. J. Chang “Finite-size supercell correction scheme for charged defects in one-dimensional systems”, Phys. Rev. B 90, 085435.

  4. Ha-Jun Sung, Duk-Hyun Choe and K. J. Chang “The effects of surface polarity and dangling bonds on the electronic properties of monolayer and bilayer MoS2 on α-quartz”, New J. Phys. 16, 113055.

  5. Lee, A. T., Ryu, B., Lee, I. and Chang, K. J. “Action-derived molecular dynamics simulations for the migration and coalescence of vacancies in graphene and carbon nanotubes” J. Phys.: Condens. Matter 26, 115303

2013

  1. Young Jun Oh, Alex Taekyung Lee, Hyeon-Kyun Noh and K. J. Chang, “Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO2 interface”, Phys. Rev. B 87, 075325.

  2. Kim, G.-M., Oh, Y. J. and Chang, K. J. “Effects of interface bonding and defects on boron diffusion at Si/SiO2 interface” J. Appl. Phys. 114, 223705 (2013)

  3. Park, J.-S. and Chang, K. J. “Site preference of Mg acceptors and improvement of p-type doping efficiency in nitride alloys” J. Phys. Condens. Matter 25, 245801

  4. Lee, A. T. and Chang, K. J. “Effect of edges on the stability and magnetic interaction of Co atoms embedded in zigzag graphene nanoribbons” Phys. Rev. B 87, 085435

  5. Noh, H. K., Park, J. S. and Chang, K. J. “Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors” J. Appl. Phys. 113, 063712

2012

  1. Sunghyun Kim, Ji-Sang Park, K. J. Chang, “Stability and Segregation of B and P Dopants in Si/SiO2 Core–Shell Nanowires”, Nano Lett. 12, 5068.

  2. Duk-Hyun Choe and K. J. Chang, “Effect of dimensionality on the localization behavior in hydrogenated graphene systems”, Nano Lett. 12, 5175.

  3. Young Jun Oh, Hyeon-Kyun Noh, and K. J. Chang, “First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2″, Physica B 407, 2989.

  4. Young Jun Oh, Jin-Heui Hwang, Hyeon-Kyun Noh, Junhyeok Bang, Byungki Ryu, and K. J. Chang, “Ab initio study of boron segregation and deactivation at Si/SiO2 interface”, Microelectron. Eng. 89, 120.

  5. Lee, A. T., Kang, J., Wei, S. H., Chang, K. J. & Kim, Y. H. “Carrier-mediated long-range ferromagnetism in electron-doped Fe-C 4 and Fe-N 4 incorporated graphene” Phys. Rev. B 86, 165403

  6. Noh, H.-K., Oh, Y. J. & Chang, K. J. “Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces” Phys. B Condens. Matter 407, 2907–2910

  7. Lee, A. T., Kang, Y. J. & Chang, K. J. “Transport properties of carbon nanotubes: Effects of vacancy clusters and disorder” J. Phys. Chem. C 116, 1179–1184

2011

  1. N. Tsogbadrakh, Eun-Ae Choi, Woo-Jin Lee, K.J. Chang, “Hole doping effect on ferromagnetism in Mn-doped ZnO nanowires”, Curr. Appl. Phys. 11, 236.

  2. H. C. Jeon, S. J. Lee, T. W. Kang, K. J. Chang, Yung Kee Yeo and T. F. George, “Magnetic and Electronic Properties of a Mn Delta-doping GaN Layer”, J. Korean Phys. Soc. 58, 1361.

  3. Ji-Sang Park , Byungki Ryu , and K. J. Chang, “Stability of Donor-Pair Defects in Si1–xGex Alloy Nanowires”, J. Phys. Chem. C 115, 10345.

  4. Hyeon-Kyun Noh, K. J. Chang, Byungki Ryu, and Woo-Jin Lee, “Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors”, Phys. Rev. B 84, 115205.

2010

  1. B. Ryu and K. J. Chang, “Effect of O-vacancy on the Device Instability of Amorphous Zinc-Tin-Oxide Thin-Film-Transistors”, IMID/IDMC/Asia Display 2010 Digest. p.105

  2. B. Ryu and K. J. Chang, “Defects responsible for the Fermi-level pinning in n+ poly-Si/HfO2 gate stacks”, Appl. Phys. Lett. 97, 242910.

  3. H. Yoon, A. T. Lee, E.-A.Choi, K. Seo, N. Bagkar, J. Cho, Y. Jo, K. J. Chang, and B. Kim, “Structure-Induced Ferromagnetic Stabilization in Free-Standing Hexagonal Fe1.3Ge Nanowires”, J. Am. Chem. Soc. 132, pp 17447?17451.

  4. D. H. Choe, J. Bang and K. J. Chang, “Electronic structure and transport properties of hydrogenated graphene and graphene nanoribbons”, New J. Phys. 12, 125005.

  5. N. Tsogbadrakh, E.-A. Choi, W.-J. Lee, and K. J. Chang, “Hole doping effect on ferromagnetism in Mn-doped ZnO nanowires”, Curr. Appl. Phys. 11, 236.

  6. E.-A. Choi, W.-J. Lee, and K. J. Chang, “Enhanced electron mediated ferromagnetism in Co-doped ZnO nanowires”, J. Appl. Phys. 108, 23904.

  7. B. Ryu, H.-K. Noh, E.-A. Choi, and K. J. Chang, “O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors”, Appl. Phys. Lett. 97, 22108.

  8. J. Bang and K. J. Chang, “Localization and one-parameter scaling in hydrogenated graphene”, Phys. Rev. B 81, 193412.

  9. J.-S. Park, B. Ryu, C.-Y. Moon and K. J. Chang, “Defects responsible for the hole gas in Ge/Si core-shell nanowires”, Nano Lett. 10, 116.

2009

  1. B. Ryu and K. J. Chang, “The electronic properties of the interface between ZnO and amorphous HfO2, Physica B 404, 4823.

  2. W.-J. Lee, B. Ryu, and K. J. Chang, “Electronic structure of oxygen-vacancy in crystalline InGaO3(ZnO)m, Physica B 404, 4794.

  3. H.-K. Noh, B. Ryu, E.-A. Choi, J. Bang, and K. J. Chang, “Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO4, Appl. Phys. Lett. 95, 082905.

  4. J. Bang, E.-A. Choi, and K. J. Chang, “The effect of impurities on hydrogen bonding site and local vibrational frequency in ZnO”, J. Appl. Phys. 106, 053522.

  5. S. Jwa, J. Bang, and K. J. Chang, “Chemical bonding and diffusion of B dopants in C-predoped Si”, Phys. Rev. B 80, 075206.

  6. E.-A. Choi and K. J. Chang, “Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations”, Appl. Phys. Lett. 94, 122901.

  7. A. T. Lee, Y.-J. Kang, K. J. Chang, and I.-H. Lee, “Reconstruction and alignment of vacancies in carbon nanotubes”, Phys. Rev. B 79, 174105.

  8. W.-J. Lee, E.-A. Choi, J. Bang, B. Ryu, and K. J. Chang, “First-principles study of the electronic structure of crystalline InGaO3(ZnO)3, J. Korean Phys. Soc. 55, 112.

  9. J. Bang and K. J. Chang, **”Atomic structure and diffusion of hydrogen in ZnO, J. Korean Phys. Soc. 55, 98.

  10. Y.-J. Kang, Y.-H. Kim, and K. J. Chang, “Electrical transport properties of nanoscale devices based on carbon nanotubes”, Current Applied Physics 9, S7.

2008

  1. C.-Y. Moon, W.-J. Lee, and K. J. Chang, “Formation of dopant-pair defects and doping efficiency in B and P doped silicon nanowires”, Nano Lett. 8, 3086.

  2. Y.-J. Kang, J. Kang, and K. J. Chang, “Electronic structure of graphene and doping effect on SiO2, Phys. Rev. B 78, 115404.

  3. W.-J. Lee, E.-A. Choi, J. Bang, B. Ryu, and K. J. Chang, “Structural and electronic properties of crystalline InGaO3(ZnO)m, Appl. Phys. Lett. 93, 111901.

  4. J. Bang and K. J. Chang, “Diffusion and thermal stability of hydrogen in ZnO”, Appl. Phys. Lett. 92, 132109.

  5. J. Kang, J. Bang, B. Ryu, and K. J. Chang, “Effect of atomic-scale defects on the low-energy electronic structure of graphene: Perturbation theory and local-density-functional calculations”, Phys. Rev. B 77, 115453.

  6. J. Kang, Y.-H. Kim, J. Bang, and K. J. Chang, “Direct and defect-assisted electron tunneling through ultra-thin SiO2 layers from first-principles”, Phys. Rev. B 77, 195321.

  7. W.-J. Lee, J. Kang, and K. J. Chang, “P-type doping and compensation in ZnO”, J. Korean Phys. Soc. 53, 196.

  8. J. Kang and K. J. Chang, “The electronic structure of Ga-vacancy in Mn-doped GaN”, Phys. Status Solidi (c) 5, 3035.

2007

  1. E.-A. Choi and K. J. Chang, “Stability of the cubic phase in GaN doped with 3d-transition metal ions”, ”Physica B” 401-402, 319. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-4PK7P7D-1&_user=170364&_coverDate=12/15/2007&_rdoc=81&_fmt=high&_orig=browse&_origin=browse&_zone=rslt_list_item&_srch=doc-info(%23toc%235535%232007%23995989999%23674358%23FLA%23display%23Volumes)&_cdi=5535&_sort=d&_docanchor=&_ct=173&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=d7842118ce55e081c0d45ce557c18e74&searchtype=a link]]

  2. J. Bang, H. Kim, J. Kang, W.-J. Lee, and K. J. Chang, “Retardation of boron diffusion in SiGe alloy”, Physica B 401-402, 196.

  3. Y.-J. Kang, Y.-H. Kim, and K. J. Chang, “First-principles study of the electrical conductance of telescopically aligned carbon nanotubes”, Phys. Rev. B 76, 205441.

  4. J. Kang and K. J. Chang, “The effect of Ga-vacancies on the defect and magnetic properties of Mn-doped GaN”, J. Appl. Phys. 102, 083910-1~7.

  5. B. Ryu, Y.-J. Kang, and K. J. Chang, “First-principles study of the electronic structure of aluminate nanotubes”, J. Phys.: Conf. Ser. 61, 195 (Non-SCI)

  6. J. Kang, D. Y. Kim, and K. J. Chang, “Reliability issues and role of defects in high-k dielectric HfO2 devices”, J. Korean Phys. Soc. 50, 552.

  7. W. J. Lee, J. Kang, and K. J. Chang, “The origin of p-type conductivity in P-doped ZnO”, J. Korean Phys. Soc. 50, 602.

  8. J. Bang, J. Kang, W.-J. Lee, and K. J. Chang, “Chemical bonding effect of Ge atoms on B diffusion in Si”, Phys. Rev. B 76, 064118.

  9. B. Ryu, Y.-J. Kang, and K. J. Chang, “Crystal binding and metal-semiconductor transition in aluminate nanotube bundles”, Phys. Rev. B 75, 235402.

  10. Y.-J. Kang, J. Kang, Y.-H. Kim, and K. J. Chang, “First-principles approach to the electron transport and applications for devices based on carbon nanotubes and ultrathin oxides”, Computer Phys. Commun. 177, 30.

2006

  1. E.-A. Choi, J. Kang, and K. J. Chang, “Energetics of cubic and hexagonal phases in Mn-doped GaN: first-principles pseudopotential calculations”, ”Phys. Rev. B” 74, 235218-1~7. [[http://prb.aps.org/abstract/PRB/v74/i24/e245218 link]]

  2. Y.-J. Kang and Chang, “Stability and electronic structure of aluminate nanotubes”, J. Korean Phys. Soc. 48(6), 1351~1354.

  3. D.-Y. Kim, J. Kang, and K. J. Chang, “Impact of Si impurities in HfO2: threshold voltage problems in poly-Si/HfO2 gate stacks”, J. Korean Phys. Soc. 48(6), 1628~1632.

  4. W.-J. Lee, J. Kang, and K. J. Chang, “Defect properties and p-type doping efficiency in phosphorous-doped ZnO”, ”Phys. Rev. B” 73, 024117-1~6. [[http://prb.aps.org/abstract/PRB/v73/i2/e024117 link]]

  5. D.-Y. Kim, J. Kang, and K. J. Chang, “Physical origin of threshold voltage problems in poly-Si/HfO2 gate stacks”, ”Appl. Phys. Lett.” 88(16), 162107-1~3. [[http://apl.aip.org/resource/1/applab/v88/i16/p162107_s1 link]]

  6. W.-J. Lee, J. Kang, and K. J. Chang, “Electronic structure of phosphorous dopants in ZnO”, ”Physica B” 376-377, 699-702. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-4J2M4HS-N&_user=170364&_coverDate=04/01/2006&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477717431&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=70256b5b116194619b2b7eaf955f1ef1&searchtype=a link]]

  7. Y.-J. Kang and K. J. Chang, “The electronic and magnetic properties of carbon nanotubes interacting with iron atoms”, ”Physica B” 376-377, 311-315. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-4J2M4HS-C&_user=170364&_coverDate=04/01/2006&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477716865&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=0b174ce7ff41fb96555ab8303a29fac5&searchtype=a link]]

  8. E.-C. Lee and K. J. Chang, “P-type doping with group-I elements and hydrogenation effect in ZnO”, ”Physica B” 376-377, 707-710. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-4J2M4HS-S&_user=170364&_coverDate=04/01/2006&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477715962&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=f5e68d4056d9499e6491987512b0a1a8&searchtype=a link]]

  9. J. Kang and K. J. Chang, “The electronic and magnetic properties of Mn doped GaN”, ”Physica B” 376-377, 635-638. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-4J3NYBD-18&_user=170364&_coverDate=04/01/2006&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477715999&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=0540dd0c74a523d86f94cd23d51463e4&searchtype=a link]]

2005

  1. H.-M. Hong, Y.-J. Kang, C.-Y. Moon, K. J. Chang, and H. J. Kim, “Tubular form of aluminates with metallic conduction: Density-functional calculations”, ”Phys. Rev. B” 72, 205435-1~5. [[http://prb.aps.org/abstract/PRB/v72/i20/e205435 link]]

  2. J. S. Kim, Y. H. Lee, and K. J. Chang, “Bridged mask growth using organometallic vapor phase epitaxy”, ”Jpn. J. Appl. Phys.” 44, p L179~L181. [[http://jjap.ipap.jp/cgi-bin/getarticle?magazine=JJAP&volume=44&page=L179 link]]

  3. J. S. Kim, Y. H. Lee, and K. J. Chang, “Growth characterization of InP in bridged mask growth using organo-metallic vapor phase epitaxy”, ”J. Crystal Growth” 275, p. 448~454. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4F9MTMJ-4&_user=170364&_coverDate=03/01/2005&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477719625&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=503699d93283c27ac51ebae517f57cb6&searchtype=a link]]

  4. H. C. Jeon, T. W. Kang, T. W. Kim, J. Kang, and K. J. Chang, “Enhancement of the magnetic properties in (Ga1-xMnx)N thin films due to Mn-delta doping”, ”Appl. Phys. Lett.” 87, p. 092501-1~3. [[http://apl.aip.org/resource/1/applab/v87/i9/p092501_s1 link]]

  5. Y.-S. Kim and K. J. Chang, Segregation of nearest-neighbor donor-pair defects to Si/SiO2 interfaces”**, ”Appl. Phys. Lett.” 87, p. 041903-1~3. [[http://apl.aip.org/resource/1/applab/v87/i4/p041903_s1 link]]

  6. Y.-J. Kang, J. Choi, C.-Y. Moon, and K. J. Chang, “Electronic and magnetic properties of single-wall carbon nanotubes filled with iron atoms”, ”Phys. Rev. B” 71, 115441-1~7. [[http://prb.aps.org/abstract/PRB/v71/i11/e115441 link]]

  7. H.-M. Hong, Y.-J. Kang, J. Kang, E.-C. Lee, Y.-H. Kim, and K. J. Chang, “Effect of chemical bonding on the magnetic stability and magnetic moment in Mn-based binary compounds”, ”Phys. Rev. B” 72, 144408-1~7. [[http://prb.aps.org/abstract/PRB/v72/i14/e144408 link]]

  8. J. Kang, K. J. Chang, and H. Katayama-Yoshida, “First-principles study of ferromagnetism in Mn-doped GaN”, ”J. Superconductivity” 18, p. 55-60. [[http://www.springerlink.com/content/p875l1w1733m0512/ link]]

2004

  1. C.-Y. Moon, Y.-H. Kim, and K. J. Chang, “Dielectric-screening properties and Coulomb pseudopotential μ* for MgB2, ”Phys. Rev. B” 70, p. 104522-1~5. [[http://prb.aps.org/abstract/PRB/v70/i10/e104522 link]]

  2. C.-Y. Moon, Y.-S. Kim, and K. J. Chang, “Atomic structure of B-related defects and B diffusion in Si predoped with P impurities”, ”Phys. Rev. B” 69, p. 085208-1~5. [[http://prb.aps.org/abstract/PRB/v69/i8/e085208 link]]

  3. E.-C. Lee and K. J. Chang, “Possible p-type doping with group-I elements in ZnO”, ”Phys. Rev. B” 70, p. 115210-1~4. [[http://prb.aps.org/abstract/PRB/v70/i11/e115210 link]]

  4. E.-C. Lee and K. J. Chang, “Ferromagnetic vs antiferromagnetic interaction in Co-doped ZnO”, ”Phys. Rev. B” 69, p. 085205-1~5. [[http://prb.aps.org/abstract/PRB/v69/i8/e085205 link]]

  5. J. Kang, E.-C. Lee, K. J. Chang, and Y.-G. Jin, **”H-related defect complexes in HfO2: A model for positive fixed charge defects, ”Appl. Phys. Lett.” 84, p. 3894-3896. [[http://apl.aip.org/applab/v84/i19/p3894_s1? link]]

  6. K.-H. Ahn, Y.-H. Kim, J. Wiersig, and K. J. Chang, “Spectral properties of incommensurate double-walled carbon nanotubes”, ”Physica E” 22, p. 666-669. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6VMT-4BN0NTV-32&_user=170364&_coverDate=04/30/2004&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477724688&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=bb4ead3da4ea667a83b4585cc4f69330&searchtype=a link]]

  7. S. J. Lee, S. Souma, G. Ihm, and K. J. Chang, “Magnetic quantum dots and magnetic edge states”, ”Physics Reports” 394, p. 1-40. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVP-4BHVNFX-2&_user=170364&_coverDate=04/30/2004&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477727168&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=80cdee2d4fe6ba4972faa5a19eaf123f&searchtype=a link]]

2003

  1. E.-C. Lee and K. J. Chang, “Atomic model for the electrical deactivatiom of N in Si oxynitrides”, ”Physica B” 340-342, p. 974-977. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-4B2CNN5-5&_user=170364&_coverDate=12/31/2003&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477756375&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=ee0b5c1c81318848d0ed308c8808f136&searchtype=a link]]

  2. C.-Y. Moon, Y.-S. Kim, and K. J. Chang, “First-principles study of the atomic structure of B-related defects in crystalline Si predoped with phosphorus”, ”Physica B” 340-342, p. 561-564. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-4B1XY10-H&_user=170364&_coverDate=12/31/2003&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=75553d252990da09b93db741d6d25521&searchtype=a link]]

  3. C.-Y. Moon, Y.-S. Kim, and K. J. Chang, “Atomic Structure of B-P and Self-Interstitial-B-P Complexes in Si”, ”J. Korean Phys. Soc.” 42, S602-S605. [[http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=65660555-83E1-4CD5-B657-BBFAA5555F01&globalmenu=3&localmenu=10 link]]

  4. Y.-H. Kim, J. Choi, K. J. Chang, and D. Tomanek, “Defective Fullerenes and Nanotubes as molecular magnets: An ab initio Study”, ”Phys. Rev. B” 68, 125420-125420. [[http://prb.aps.org/abstract/PRB/v68/i12/e125420 link]]

  5. Y.-S. Kim, E.-C. Lee, and K. J. Chang, “Electrically Deactivating Nearest-neighbor Donor-pair Defects in Si”, ”Phys. Rev. Lett.” 91, 125503-125503. [[http://prl.aps.org/abstract/PRL/v91/i12/e125503 link]]

  6. Y.-H. Kim, I.-H. Lee, K. J. Chang, and S. Lee, “Dynamics of Fullerene Coalescence”, ”Phys. Rev. Lett.” 90, 065501-065501. [[http://prl.aps.org/abstract/PRL/v90/i6/e065501 link]]

  7. K. H. Ahn, Y.-H. Kim, J. Wiersig, and K. J. Chang, “Spectral Correlation in Incommensurate Multiwalled Carbon Nanotubes”, ”Phys. Rev. Lett.” 90, 026601-026601. [[http://prl.aps.org/abstract/PRL/v90/i2/e026601 link]]

  8. J. Kang, E.-C. Lee, and K. J. Chang, “First-principles Study of the Structural Phase Transformation of Hafnia under Pressure”, ”Phys. Rev. B” 68, 054106-054106. [[http://prb.aps.org/abstract/PRB/v68/i5/e054106 link]]

  9. H.-W. Lee, H.-S. Sim, D.-H. Kim, and K. J. Chang, “Towards Unified Understanding of Conductance of Stretched Monatomic Contacts”, ”Phys. Rev. B” 68, 075424-075424. [[http://prb.aps.org/abstract/PRB/v68/i7/e075424 link]]

  10. J. Choi, Y.-H. Kim, K. J. Chang, and D. Tomanek, “Itinerant Ferromagnetism in Heterostructured C/BN Nanotubes”, ”Phys. Rev. B” 67, 125421-125421. [[http://prb.aps.org/abstract/PRB/v67/i12/e125421 link]]

  11. Y.-S. Kim and K. J. Chang, “Nitrogen-hydrogen Complexes in GaAs and GaAs1-xNx Alloys”, ”phys. stat. sol. (b)” 235, 121-125. [[http://onlinelibrary.wiley.com/doi/10.1002/pssb.200301544/pdf link]]

2002

  1. Y.-G. Jin and K. J. Chang, “Efficient Real-space Multigrid Method and Applications to Clusters and Defects in SiO2″, ”J. Korean Phys. Soc.” 40, 406-415. [[http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=F6FE9645-B935-4BF8-A8B1-C390D8CEBF9C&globalmenu=3&localmenu=10 link]]

  2. E.-C. Lee and K. J. Chang, “Electrically Inactive Nitrogen Complex in Si Oxinitride”, ”Phys. Rev. B” 66, 233205-233205. [[http://prb.aps.org/abstract/PRB/v66/i23/e233205 link]]

  3. Y.-H. Kim and K. J. Chang, “Electron Transport through Quantum-dot States of n-type Carbon Nanotubes”, ”Appl. Phys. Lett.” 81, 2264-2266. [[http://apl.aip.org/resource/1/applab/v81/i12/p2264_s1 link]]

  4. Y.-S. Kim and K. J. Chang, “Nitrogen-monohydride versus Nitrogen-dihydride Complexes in GaAs and GaAs1-xNx Alloys”, ”Phys. Rev. B” 66, 073313-073313. [[http://prb.aps.org/abstract/PRB/v66/i7/e073313 link]]

  5. E.-C. Lee, Y.-S. Kim, Y.-G. Jin, and K. J. Chang, “First-principles Study of Hydrogen Adsorption on Carbon Nanotube Surfaces”, ”Phys. Rev. B” 66, 073415-073415. [[http://prb.aps.org/abstract/PRB/v66/i7/e073415 link]]

  6. D.-H. Kim and K. J. Chang, “Electron Transport in Telescopying Carbon Nanotubes”, ”Phys. Rev. B” 66, 155402-155402. [[http://prb.aps.org/abstract/PRB/v66/i15/e155402 link]]

  7. H.-S. Sim, G. Ihm, N. Kim, S. J. Lee, and K. J. Chang, “Edge-channel Transport through Quantum Wires with a Magnetic Quantum Dot”, ”Physica E” 12, 719-721. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6VMT-44KPSWB-1R&_user=170364&_coverDate=01/31/2002&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477762766&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=63607645eeab5b15f202d6ea12fb7f5b&searchtype=a link]]

  8. C.-Y. Moon, Y.-S. Kim, E.-C. Lee, Y.-G. Jin, and K. J. Chang, “Mechanism for Oxidative Etching in Carbon nanotubes”, ”Phys. Rev. B” 65, 155401-155401. [[http://prb.aps.org/abstract/PRB/v65/i15/e155401 link]]

  9. H.-S. Sim, H. W. Lee, and K. J. Chang, “Even-odd Behavior and Quantization of Conductance in Monovalent Atomic Contacts”, ”Physica E” 14, 347-354. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6VMT-44NM6WV-1&_user=170364&_coverDate=07/31/2002&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477763769&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=643eced30cde89ee26e587ccac34acf0&searchtype=a link]]

2001

  1. Y.-H. Kim, H.-S. Sim, and K. J. Chang, “Electronic Structure of Collapsed C, BN, and BC3 nanotubes”, ”Current Applied Physics” 1, 39-44. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6W7T-42H2V0G-8&_user=170364&_coverDate=01/31/2001&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477766624&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=923e166d28ccdd1e96fb1faa6f112d10&searchtype=a link]]

  2. H.-S. Sim, K. J. Chang, N. Kim, and G. Ihm, “Electron Transport in Quantum Wires with a Magnetic Quantum Dot”, ”J. Korean Phys. Soc.” 39, 519-521. [[http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=9B9A15C1-7CE6-4BF7-86B5-4F11AF466ADB&globalmenu=3&localmenu=10 link]]

  3. N. Kim, S. J. Lee, T. W. Kang, M. J. Kim, G. Ihm, H.-S. Sim, and K. J. Chang, “Electronic Properties of Electromagnetic Quantum Structures”, ”J. Korean Phys. Soc.” 39, 501-505. [[http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=C7D2E563-CE80-4F64-8AC4-3C43D073B9AD&globalmenu=3&localmenu=10 link]]

  4. E.-C. Lee, Y.-S. Kim, Y.-G. Jin, and K. J. Chang, “First-principles Study of p-type Doping and Codoping in ZnO”, ”J. Korean Phys. Soc.” 39, S23-S26. [[http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=ACAFD940-DB1A-4FC0-8EB3-A097046DEFEB&globalmenu=3&localmenu=10 link]]

  5. Y.-S. Kim, E.-C. Lee, and K. J. Chang, “Stability of Wurtzite and Rocksalt MgxZn1-xO Alloys”, ”J. Korean Phys. Soc.” 39, S92-S96. [[http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=77D942F9-BE4B-4422-813C-146D78BDEF35&globalmenu=3&localmenu=10 link]]

  6. G.-H. Kim, M. Y. Simmons, C.-T. Liang, D. A. Ritchie, A. C. Churchill, H.-S. Sim, K. J. Chang, G. Ihm, and N. Kim, “Method of Determining Potential Barrier Heights at Submonolayer AlAs/GaAs Heterointerfaces”, ”Phys. Rev. B” 64, 165313-165313. [[http://prb.aps.org/abstract/PRB/v64/i16/e165313 link]]

  7. D.-H. Kim, H.-S. Sim, and K. J. Chang, “Electronic and Transport Properties of Single-wall Carbon Nanotubes Encapsulating Fullerene-based Structures”, ”Phys. Rev. B” 64, 115409-115409. [[http://prb.aps.org/abstract/PRB/v64/i11/e115409 link]]

  8. Y.-S. Kim and K. J. Chang, “Structure and Formation of H-induced (111) Platelets in Si”, ”Physica B” 302-303, 244-248. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-4372W5V-18&_user=170364&_coverDate=12/31/2001&_alid=1477776638&_rdoc=1&_fmt=high&_orig=search&_origin=search&_zone=rslt_list_item&_cdi=5535&_sort=r&_st=13&_docanchor=&view=c&_ct=1&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=ea951bdcfb6b8e6b5dfe89565e34112c&searchtype=a link]]

  9. H.-S. Sim, H. W. Lee, and K. J. Chang, “Even-odd Behavior of Conductance in Monoatomic Sodium Wires”, ”Phys. Rev. Lett.” 87, 096803-096803. [[http://prl.aps.org/abstract/PRL/v87/i9/e096803 link]]

  10. E.-C. Lee, Y.-S. Kim, Y.-G. Jin, and K. J. Chang, “Compensation Mechanism for N Acceptors in ZnO”, ”Phys. Rev. B” 64, 085120-085120. [[http://prb.aps.org/abstract/PRB/v64/i8/e085120 link]]

  11. Y.-H. Kim, K. J. Chang, and S. G. Louie, “Electronic Structure of Radially Deformed BN and BC3 Nanotubes”, ”Phys. Rev. B” 63, 205408-205408. [[http://prb.aps.org/abstract/PRB/v63/i20/e205408 link]]

  12. H.-S. Sim, K. J. Chang, N. Kim, and G. Ihm, “Electron and Composite-fermion Edge States in Nonuniform Magnetic Fields”, ”Phys. Rev. B” 63, 125329-125329. [[http://prb.aps.org/abstract/PRB/v63/i12/e125329 link]]

  13. H.-S. Sim, C.-J. Park, and K. J. Chang, “Resonant Transport in Single-wall Armchair Carbon Nanotubes with Local Mirror-symmetry-breaking Deformations”, ”Phys. Rev. B” 63, 073402-073402. [[http://prb.aps.org/abstract/PRB/v63/i7/e073402 link]]

  14. Y.-S. Kim and K. J. Chang, “Structural Transformation in the Formation of H-induced (111) Platelets in Si”, ”Phys. Rev. Lett.” 86, 1773-1776. [[http://prl.aps.org/abstract/PRL/v86/i9/p1773_1 link]]

  15. Y. G. Jin and K. J. Chang, “Mechanism for the Enhanced Diffusion of Charged Oxygen Ions in SiO2″, ”Phys. Rev. Lett.” 86, 1793-1796. [[http://prl.aps.org/abstract/PRL/v86/i9/p1793_1 link]]

  16. H.-S. Sim, G. Ihm, and K. J. Chang, “Magnetic Quantum Dot: A magnetic Transition Barrier and Resonator”, ”Phys. Rev. Lett.” 87, 146601-146601. [[http://prl.aps.org/abstract/PRL/v87/i14/e146601 link]]

  17. Y.-H. Kim and K. J. Chang, “Subband mixing rules in circumferentially perturbed carbon nanotubes: Effects of transverse electric fields”, ”Phys. Rev. B” 64, 153404-153404. [[http://prb.aps.org/abstract/PRB/v64/i15/e153404 link]]

  18. E.-C. Lee, Y.-S. Kim, Y.-G. Jin, and K. J. Chang, “First-principles Study of the Comepnsation Mechanism in N-doped ZnO”, ”Physica B” 308-310, 912-915. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-459MSV1-85&_user=170364&_coverDate=12/31/2001&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477776405&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=a37982993058f3b3fb4b341b5f44cf3a&searchtype=a link]]

  19. Y.-S. Kim and K. J. Chang, “Formation Mechanism of Hydrogen-induced (111) Platelets in Si”, ”Physica B” 308-310, 143-146. [[http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-459MSV1-16&_user=170364&_coverDate=12/31/2001&_rdoc=1&_fmt=high&_orig=search&_origin=search&_sort=d&_docanchor=&view=c&_searchStrId=1477775505&_rerunOrigin=google&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=fdf09535ef1f18a89d7bd7f67aa48de3&searchtype=a link]]

2000

  1. Y.-H. Kim, H.-S. Sim, and K. J. Chang, 2000, “Subbands in Carbon Nanotubes under Radial Deformation”, J. Korean Phys. Soc. 37, 85-88.

  2. C.-S. Kee, J.-E. Kim, H. Y. Park, K. J. Chang, and H. Lim, 2000, “Essential Role of Impedence in the Formation of Acoustic Band Gaps”, J. Appl. Phys. 87, 1593-1596.

1999

  1. Y.-S. Kim, Y.-G. Jin, J.-W. Jeong, and K. J. Chang, 1999, “First-prinsiples Calculations for the Vibrational Frequencies of H2 and H2* Complexes in Si”, J. Korean Phys. Soc. 34, 290-294.

  2. N. Kim, G. Ihm, H.-S. Sim, and K. J. Chang, 1999, “Electronic Structure of Magnetic Quantum Ring”, Phys. Rev. B 60, 8767-8772.

  3. Y.-J. Ko, J.-Y. Yi, and K. J. Chang, 1999, “Ge Adatom Adsorption, Diffusion, and Exchange on Surfactant-covered Si(111) Surfaces”, Phys. Rev. B 60, 1777-1782.

  4. Y.-G. Jin, and K. J. Chang, 1999, “Dynamic Response Function and Energy-loss Spectrum for Li using N-point Pade Approximant”, phys. Rev. B 59, 14841-14844.

  5. C.-J. Park, S.-G. Lee, Y.-J. Ko, and K. J. Chang, 1999, “Theoretical Study of the Structural Phase Transformation of BeO under Pressure”, Phys. Rev. B 59, 13501-13504.

  6. J.-W. Jeong, and K. J. Chang, 1999, “Molecular Dynamics Simulations for the Shock Hugoniot Meltings of Cu, Pd, and Pt”, J. Phys. : Condens. Matter 11, 3799-3806.

  7. C.-J. Park, Y.-H. Kim, and K. J. Chang, 1999, “Band Gap Modification by Radial Deformation in Carbon Nanotubes”, Phys. Rev. B 60, 10656-10659.

  8. C.-S. Kee, S. S. Oh, J.-E. Kim, H. Y. Park, and K. J. Chang, 1999, “Thermal Properties of a Photon Gas in Photonic Crystals”, Phys. Rev. B” 60, 10573-10575.

  9. H.-S. Sim, G. Ihm, and K. J. Chang, 1999, “Composite-fermion Edge States in Fractional Quantum Hall systems”, Phys. Rev. Lett.” 82, 596-599.

  10. Y.-S. Kim, Y.-G. Jin, J.-W. Jeong, and K. J. Chang, 1999, “Local vibrational modes of H2 and H2* complexes in crystalline Si”, Semicond. Sci. and Technol. 14, 1042-1047.

  11. J.-W. Jeong, I.-H. Lee, and K. J. Chang, 1999, “Molecular Dynamics Study of Melting on the Shock Hugoniot of Al”, Phys. Rev. B 59, 329-333.

  12. S.-G. Lee, and K. J. Chang, 1999, “Atomic Model for Blue Luminescences in Mg-doped GaN”, Semicond. Sci. and Technol. 14, 138-242.

  13. Y.-G. Jin, J.-W. Jeong, and K. J. Chang, 1999, “Real-space Electronic Structure Calculations of Charged Clusters and Defects in Semiconductors Using a Multigrid Method”, Physica B 273-274, 1003-1006.

  14. Y.-S. Kim, Y.-G. Jin, and K. J. Chang, 1999, “Stability and Vibrational Modes of H2 and H2* Complexes in Si”, Physica B 273-274, 231-234.

1998

  1. S.-G. Lee and K.J. Chang, “Defect Concentrations of Native and Mg-related Defects in GaN”, J. Korean Phys. Soc. 32, 188 (1998).

  2. W.-C. Lee, S.-G. Lee, and K. J. Chang, “First-principles Study of Self-interstitial Diffusion Mechanisms in Silicon”, J. Phys. : Condens. Matter 10, 995 (1998).

  3. Y.-J. Ko, J.-Y. Yi, S.-J. Park, I.-H. Lee, and K. J. Chang, “First-principles Study of the As-mediated growths of Si and Ge on Si(100)”, Surf. Review and Lett. 5, 77 (1998).

  4. J.-Y. Koo, Y.-J. Ko, J.-Y. Yi, C. Hwang, D.-H. Kim, S. Lee, D.-H. Shin, and K. J. Chang, “Atomic Structure of Si(100) Surfaces”, Surf. Review and Lett. 5, 1 (1998).

  5. G. Ihm, S. J. Lee, H.-S. Sim, K.-H. Ahn, and K. J. Chang, “Edge States in a Magnetic Quantum Dot”, Microelectronic Engineering 43-44. 31 (1998).

  6. H.-S. Sim, K.-H. Ahn, K. J. Chang, G. Ihm, and S. J. Lee, “Magnetic Edge States in a Magnetic Quantum Dot”, Phys. Rev. Lett. 80, 1501 (1998).

  7. G. Ihm, N. Kim, H.-S. Sim, K.-H. Ahn, K. J. Chang, and S. J. Lee, “Edge State Formation in Magnetic Quantum Structures”, Physica B 249-251, 291 (1998).

  8. S.-G. Lee and K. J. Chang, “Atomic Model for the Donor Compensation in Cl-doped ZnTe”, Phys. Rev. B 57, 6239 (1998).

  9. Y.-G. Jin and K. J. Chang, “Dielectric Response Functions and Coulomb Repulsion Parameters in bcc and 9R Lithium”, Phys. Rev. B 57, 14684 (1998).

  10. J.-W. Jeong, I.-H. Lee, J. H. Oh, and K. J. Chang, “First-principle Study of the Equilibrium Structure of Sin Clusters”, J. Phys. : Condens. Matter 10, 5851 (1998).

  11. T.-Y. Chung and K. J. Chang, “Exciton Binding Energies in GaN/AlGaN Quantum Well Structures”, Semicond. Sci. and Technol. 13, 876 (1998).

  12. C.-S. Kee, J.-E. Kim, H.-Y. Park, and K. J. Chang, “Defects Modes in a Two-dimensional Square Lattice of Square Rods”, Phys. Rev. E 58, 7908 (1998).

1997

  1. Y.-J. Kim and K.J. Chang, “Impurity Scattering in Superconductors”, J. Korean Phys. Soc. 31, S298 (1997).

  2. S.-G. Lee and K. J. Chang, “A First-principles Study of Mg-related Defects in GaN”, Materials Science Forum Vols. 258-263, 1137 (1997).

  3. Y.-J. Ko, K. J. Chang, and J.-Y. Yi, “Atomic and Electronic Structure of Li-adsorbed Si(100) surfaces”, Phys. Rev. B 56, 9575 (1997).

  4. K.-H. Ahn and K. J. Chang, “Pairing in the Quantum Hall System”, Phys. Rev. B 56, 12772 (1997).

  5. Y.-G. Jin, K.-H. Lee, and K. J. Chang, “First-principles Calculation of the Coulomb Pseudopotential μ* for the Simple Hexagonal Phase of Si”, J. Phys. : Condens. Matter 9, 6351 (1997).

  6. T.-Y. Chung, J. H. Oh, S.-G. Lee, J.-W. Jeong, and K. J. Chang, “Optical properties of ZnSSe/ZnMgSSe Quantum Wells”, Semiconductor Science and Technology 12, 701 (1997).

  7. K.-H. Ahn and K. J. Chang, “Symmetry-breaking Skyrmion States in Fractional Quantum Hall Systems”, Phys. Rev. B 55, 6735 (1997).

  8. I.-H. Lee, J.-W. Jeong, and K. J. Chang, “Invariant Molecular Dynamics Study of the Diamond-to-beta-Sn transition in Si under Hydrostatic and Non-hydrostatic Compressions”, Phys. Rev. B 55, 5689 (1997).

1996

  1. K.-H. Lee and K.J. Chang, “Dielectric Response Function and Applications to Solids”, J. Korean Phys. Soc. 29, S33 (1996).

  2. K.-H. Lee and K. J. Chang, “Analytic Continuation of the Dynamic Response Function using a N-point Pade Approximant”, Phys. Rev. B 54, R8285 (1996).

  3. S.-G. Lee and K. J. Chang, “Atomic Structure of Defect Complexes Containing Carbon and Hydrogen in GaAs”, Phys. Rev. B 54, 8522 (1996).

  4. K.-H. Lee and K. J. Chang, “Linear Response Calculation of the Coulomb pseudopotential μ* for Nb”, Phys. Rev. B 54, 1419 (1996).

  5. J. H. Oh and K. J. Chang, “Variational “Quantum Monte Carlo Calculation of the Effective Spin Lande g-Factor in a two-Dimensional Electron System”, Phys. Rev. B 54, 4948 (1996).

  6. J. H. Oh, K. J. Chang, and G. Ihm, “Electronic Structure and Optical Properties of Coupled-Quantum Dots”, Phys. Rev. B 53, R13264 (1996).

  7. J. H. Oh, K. J. Chang, and G. Ihm, “Electronic Structure of In1-xGaxAs/GaAs strained quantum wells with a δ-doped layer”, J. Phys. : Condens. Matter 8, 1705 (1996).

  8. S.-G. Lee and K. J. Chang, “Energetics and Hydrogen Passivation of Carbon-related Defects in InAs and In0.5Ga0.5As”, Phys. Rev. B 53, 9784 (1996).

  9. J.H. Oh, K.J. Chang, G. Ihm, and S.J Lee, “Electronic Density Dependence of the Effective g-Factor in a 2-Dimensional Electron Gas at Strong Magnetic Fields”, Surface Science 361/362, 493 (1996).

  10. Y.-J. Ko, K. J. Chang, J.-Y. Yi, S.-J. Park, and E.-H. Lee, “Single Adatom Exchange in Surfactant-Mediated Epitaxial Growth”, Phys. Rev. Lett. 22, 3160 (1996).

1995

  1. B.-H. Cheong, I.-H. Lee, and K.J. Chang, “First-principles Calculations of the Phonon Spectrum in Semiconductors”, J. Korean Phys. Soc. 28. S267 (1995).

  2. Y.J. Ko, K.J. Chang, and J.-Y. Yi, “A First-principles Study of Li-metal Adsoprtion on Si(100) Surface”, J. Korean Phys. Soc. 28, S101 (1995).

  3. J.H. Oh, K.J. Chang, G. Ihm, and S.J. Lee, “Electronic Heat Capacities in Quantum Wires and Dots under Magnetic Fields”, J. Korean Phys. Soc. 28, S132 (1995).

  4. S.-G. Lee, B.-H. Cheong, and K. J. Chang, “A First-principles Study of Carbon Impurities in GaAs and InAs”, Materials Science Forum Vols. 196-201, 803 (1995).

  5. B.-H. Cheong and K. J. Chang, “Nitrogen-doping Efficiency in ZnSe and ZnTe”, Materials Science Forum Vols. 196-201, 303 (1995).

  6. K.-H. Lee, S.-G. Lee, and K. J. Chang, “Optical properties of ordered In0.5Ga0.5P alloys”, Phys. Rev. B 52, 15862 (1995).

  7. K.-H. Ahn, J.-H. Oh, and K. J. Chang, “Correlation Effects in a Quantum Dot in the Spin Polarized Regime”, Phys. Rev. B 52, 13757 (1995).

  8. S.-G. Lee and K. J. Chang, “A First-principles Study of the Structural Properties of MgS-, MgSe-, ZnS-, and ZnSe-based Superlattices”, Phys. Rev. B 52, 1918 (1995).

  9. I.-H. Lee, S.-G. Lee, and K. J. Chang, “Symmetric Stress Tensor in the Local Density-functional Framework Using a Separable Nonlocal Psueodpotential”, Phys. Rev. B 51, 14697 (1995).

  10. K.-H. Lee, K. J. Chang, and M. L. Cohen, “First-principles calculations of the Coulomb pseudopotential μ*: Application to Al”, Phys. Rev. B 52, 1425 (1995).

  11. K.J. Chang and B.-H. Cheong, “Structure and Stability of the DX Centers in GaAs and InP”, Mod. Phys. Lett. B 9, 511 (1995).

  12. S.K. Noh, J.I. Lee, G. Ihm, J.H. Oh, and K.J. Chang, “Anomalous Magnetoresistance Peaks in Quantum Hall Plateau Regions”, J. Phys. : Condens. Matter 7, 4517 (1995).

  13. B.H. Cheong, C.H. Park, and K.J. Chang, “First-principles Study of the Compensation Mechanism for Nitrogen Acceptors in ZnSe”, Phys. Rev. B 51, 10610 (1995).

  14. Y.-J. Ko, K.J. Chang, and J.-Y. Yi, “Atomic Structure of Na Adsorbed Si(100) Surfaces”, Phys. Rev. B 51, 4329 (1995).

  15. S.-G. Lee, B.-H. Cheong, K.-H. Lee, and K.J. Chang, “First-principles Study of the Electronic and Optical Properties of Confined Silicon Systems”, Phys. Rev. B 51, 1762 (1995).

1994

  1. B.H. Cheong and K.J. Chang, “Defect Stability and Hole Compensaton in Carbon Doped GaAs”, J. Korean Phys. Soc. 27, S206 (1994).

  2. K.-H. Lee, N.S. Yoon, and K.J. Chang, “Dielectric Function of Si by a Linear Combination of Atomic Orbital Method”, J. Korean Phys. Soc. 27, 538 (1994).

  3. J.H. Oh, K.J. Chang, G. Ihm, and S.J Lee, “Electronic Structure of Quantum Dots with Two Electrons in Tilted Magnetic Fields”, Superlattices and Microstructures 16, 183 (1994).

  4. S.K. Noh, J.I. Lee, G. Ihm, J.H. Oh, K.J. Chang, and S.J. Lee, “Anomalous Magnetotransport in Narrow Quantum Hall Conductors”, Superlattices and Microstructures 16, 187 (1994).

  5. J.-H. Oh, K.J. Chang, G. Ihm, and S.J. Lee, “Electronic Structure of Three-dimensional Quantum Dots in Tilted Magnetic Fields”, Phys. Rev. B 50, 15397 (1994).

  6. I.-H. Lee and K.J. Chang, “Atomic and Electronic Structure of Amorphous Si from First-principles Molecular Dynamics Simulations”, Phys. Rev. B 50, 18083 (1994).

  7. K.-H. Lee, C.H. Park, B.-H. Cheong, and K.J. Chang, “First-principles Study of the Optical Properties of SiC”, Solid State Commun. 92, 869 (1994).

  8. S.J. Lee, J.H. Oh, K.J. Chang, and G. Ihm, “Dimensional Crossover and Temperature Dependence of the Heat Capacity in Two-direction Double- Barrier Resonant-tunneling Structures”, J. Phys : Cond. Matter 6, 4541 (1994).

  9. B-H. Cheong and K.J. Chang, “Compensation and Diffusion Mechanisms of Carbon Dopants in GaAs”, Phys. Rev. B 49, 17436(1994).

  10. J.H. Oh, K.J. Chang, G. Ihm, and S.J. Lee, “Heat Capacities of Multi-quantum Well and Wire Structures in High Mangetic Field”, Physica B 201, 353 (1994).

  11. C.H. Park, B.H. Cheong, K.-H. Lee, and K.J. Chang, “Structural and Electronic Properties of Cubic, 2H, 4H, and 6H SiC”, Phys. Rev. B 49, 4485(1994).

  12. K.-H. Lee and K.J. Chang, “First-principles Study of the Optical Properties and the Dielectric response of Al”, Phys. Rev. B 49, 2362(1994).

  13. I.-H. Lee, K.J. Chang, and Y.H. Lee, “Tight-binding Molecular Dynamics Study of the Equilibrium Structures of Small Si Clusters”, J. Phys : Cond. Matter 6, 741(1994).

1993

  1. J.H. Oh, K.J. Chang, G. Ihm, and S.J. Lee, “Electronic Structure and Heat Capacity of Multi-quantum Well Structures in Strong Magnetic Fields”, J. Korean Phys. Soc., 26, S445(1993).

  2. K.-H. Lee and K.J. Chang, “Dielectric Response and Optical property of Al”, J. Korean Phys. Soc., 26, S442(1993).

  3. C.H. Park and K.J. Chang, “Pseudodirect Band Gaps in Short-period (GaP)m(AlP)m Superlattices”, J. Korean Phys. Soc., 26, S50(1993).

  4. B.H. Cheong and K.J. Chang, “The Structural and Dynamical Properties of Shallow and Deep Donors in GaAs under Pressure”, J. Korean Phys. Soc., 26, S54(1993).

  5. B.-H. Cheong and K.J. Chang, “Metastability and Chemical Bonding of S-induced Defects in GaAs and InP”, Phys. Rev. Lett., 71, 4354(1993).

  6. J.H. Oh, K.J. Chang, G. Ihm, and S.J. Lee, “Oscillating Magnetizations of Multi-quantum Well Structures in Titled Magnetic Fields”, Phys. Rev. B 48, 15441(1993).

  7. C.H. Park, I.-H. Lee, and K.J. Chang, “A New Efficient Modified Jacobi Relaxation for Minimizing the Energy Functional”, Phys. Rev. B 47, 15996(1993)

  8. C.H. Park and K.J. Chang, “Structural and Electronic Properties of GaP-AlP (001) Superlattices”, Phys. Rev. B 47, 12709(1993)

1992

  1. B.H. Cheong and K.J. Chang, “First-Principles Study of the Atomic Structure and Local Vibrational modes of the DX Center in Ga As under Pressure”, Phys. Rev. B 46, 13131(1992).

  2. K.J. Chang, B.H. Cheong, and C.H. Park, “Atomic Model for Hydrogen Passivation of DX Centers in GaAs and AlxGa1-xAs Alloys”, Solid State Commun. 84, 1005 (1992)

  3. I.-H. Lee, B.H. Cheong, and K.J. Chang, “Hydrogen-Beryllium Complexes in Crystalline Silicon”, Phys. Rev. B 46, 2041 (1992)

  4. C.H. Park and K.J. Chang, “Structural Stability of Bulk and Epitaxial In0.5Ga0.5P-Alloy based Ordered Superlattices”, Phys. Rev. B 45, 11775 (1992)

1991

  1. C.H. Park and K.J. Chang, “The Effects of Non-phonon Mechanisms on High-Temperature Superconductivity”, J. Korean Phys. Soc. 24, 187 (1991)

  2. C.H. Park and K.J. Chang, “Electronic Pairing Mechanism and Superconducting Gap in High Tc Superconductors”, Physica C 184, 81(1991).

  3. K.-S. Hyun, C.Lee, K.J. Chang, and J.Jang, “Thermally Induced Metastability in Compensated and Delta-doped Amorpous Silicon”, Phil. Mag. B 64, 689 (1991)

  4. B.H. Cheong and K.J. Chang, “First-principles Study of the Structural Pro- perties of Sn under pressure”, Phys. Rev. B 44, 4103 (1991)

  5. B.H. Cheong, K.J. Chang, and M.L.Cohen, “Pressure Dependences of Band Gaps and Optical-Phonon Frequency in Cubic SiC”, Phys. Rev. B 44, 1053 (1991)

  6. K.J. Chang, “Atomic Structures of Shallow Acceptor- and Donor-Hydrogen Complexes in GaAs”, Solid State Commun. 78, 273 (1991)

  7. H.Y. Cho, S.-K Min, C. Lee, and K.J. Chang, “Negatively Charged State of Atomic Hydrogen in n-type GaAs”, Phys. Rev. B 44, 13779 (1991)

  8. H.Y. Cho, E.K. Kim, S.-K. Min, K.J. Chang, and C. Lee, “Metastable Behavior pf Deep Levels in Hydrogenated GaAs”, Appl. Phys. Lett. 58, 1866 (1991)

  9. C.H. Lee, C. Lee, K.J. Chang, S.C. Kim, and J.Jang, “Hydrogenation Effect in an n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor”, Appl. Phys. Lett. 58, 134 (1991)

1990

  1. H.Y. Cho, E.K. Kim, S.-K. Min, K.J. Chang, and C. Lee, “Electric-field- enhanced Dissociation of the Hydrogen-Si Donor Complex in GaAs”, J. Appl. Phys. 68, 5077 (1990).

  2. E. Tarnow, S.B. Zhang, K.J. Chang, and D.J. Chadi, “Theory of Be-induced Defects in Si”, [Phys. Rev. B 42, 11252 (1990).]

  3. K.J. Chang and D.J. Chadi, “Vibrational properties of Metastable Diatomic- Hidrogen-Complexes in Crystalline Silicon”, Phys. Rev. B 42, 7651 (1990).

1989

  1. K.J. Chang and D.J. Chadi, “Hydrogen Bonding and Diffusion in Crystalline Si”, Phys. Rev. B 40, 11644 (1989).

  2. D.J. Chadi and K.J. Chang, “Self-Compensation through Large Lattice Relaxation in p-type ZnSe”, Appl. Phys. Lett. 55, 575 (1989).

  3. D.J. Chadi, K.J. Chang, and W. Walukiewicz, “Reply to Comment”, ‘Phys. Rev. Lett. 62, 1923 (1989).

  4. D.J. Chadi and K.J. Chang, “Energetics of DX-Center Formation in GaAs and AlxGa1-xAs Alloys”, Phys. Rev. B 39, 10063 (1989).

  5. K.J. Chang and D.J. Chadi, “Diatomic-Hydrogen-Complex Diffusion and Self- trapping in Crystalline Silicon”, Phys. Rev. Lett. 62, 937 (1989).

1988

  1. K.J. Chang, M.L. Cohen, and D.R. Penn, “Electronic Correlations and Satellites in Superconducting Oxides”, Phys. Rev. B 38, 8691 (1988).

  2. D.J. Chadi and K.J. Chang, “Theory of the Atomic and Electronic Structure of DX Centers in GaAs and AlxGa1-xAs alloys”, Phys. Rev. Lett. 61, 873 (1988).

  3. D.J. Chadi and K.J. Chang, “Metastability of the Isolated Arsenic-Antisite Defect in GaAs”, Phys. Rev. Lett. 60, 2187 (1988).

  4. K.J. Chang and D.J. Chadi, “Theory of Hydrogen Passivation of Shallow-Level Dopants in Crystalline Silicon”, Phys. Rev. Lett. 60, 1422 (1988).

  5. D.J. Chadi and K.J. Chang, “Magic Numbers for Vacancy Aggregation in Crystalline Si”, Phys. Rev. B 38, 1523 (1988).

  6. A.Y. Liu, K.J. Chang, and M.L. Cohen, “Theory of Electronic, Vibrational, and Superconducting Properties of fcc Silicon”, Phys. Rev. B 37, 6344 (1988).

1987

  1. L.C. Bourne, M.F. Crommie, A. Zettl, H. zur Loye, S.W. Keller, K.L. Leary, A.M. Stacy, K.J. Chang, M.L. Cohen, and D.E. Morris, “Search for Isotope Effect in Superconducting Y-Ba-Cu-O”, Phys. Rev. Lett. 58, 2337 (1987).

  2. L.C. Bourne, A. Zettl, K.J. Chang, M.L. Cohen, A.M. Stacy, and W.K. Ham, “Elasticity Studies of La2-xSrxCuO4″, Phys. Rev. B 35, 8785 (1987).

  3. S. Fahy, K.J. Chang, S.G. Louie, and M.L. Cohen, “Pressure Coefficients of Band Gaps of Diamond”, Phys. Rev. B 35, 5856 (1987).

  4. K.J. Chang and M.L. Cohen, “Ab initio Pseudopotential Study of Structural and High Pressure Properties of SiC”, Phys. Rev. B 35, 8196 (1987).

1986

  1. K.J. Chang and M.L. Cohen, “First-Principles Study of Structural Properties of Ge”, Phys. Rev. B 34, 8581 (1986).

  2. D. Erskine, P.Y. Yu, K.J. Chang, and M.L. Cohen, “Superconductivity and Phase Transitions in Compressed Si to 45 GPa”, Phys. Rev. Lett. 57, 2741 (1986).

  3. K.J. Chang and M.L. Cohen, “Electron-Phonon Interactions and Superconductivity in Si, Ge and Sn”, Phys. Rev. B 34, 4552 (1986).

  4. G.Martinez, J.M. Mignot, G. Chouteau, K.J. Chang, M.M. Dacorogna, and M.L. Cohen, “Superconductivity of Silicon”, Physica Scripta T13, 226 (1986).

  5. R.M. Wentzconvitch, K.J. Chang, and M.L. Cohen, “Electronic and Structural Properties of BN and BP”, Phys. Rev. B 34, 1071 (1986).

  6. K.J. Chang and M.L. Cohen, “Rhombohedral Phase Stability of the Group-VA Elements”, Phys. Rev. B 33, 7371 (1986).

  7. K.J. Chang and M.L. Cohen, “Structural Stability of Phases of Black Phosphorus”, Phys. Rev. B 33, 6177 (1986).

  8. Y.K. Vohra, K.E. Brister, S.Desgreniers, A.L. Ruoff, K.J. Chang, and M.L. Cohen, “Phase-Transition Studies of Germanium to 1.25 Mbar”, Phys. Rev. Lett. 56, 1944 (1986).

1985

  1. M.L. Cohen, K.J. Chang and M.M. Dacorogna, “Thoretical Study of Supercon- ductivity in Highly Condensed Si”, Physica B 135, 229 (1985).

  2. M.M. Dacorogna, K.J. Chang and M.L. Cohen, “Pressure Increase of the Electron-Phonon Interaction in Superconducting Hexagonal Silicon”, Phys. Rev. B 32, 1853 (1985).

  3. K.J. Chang, M.M. Dacorogna, M.L. Cohen, J.M. Mignot, G. Chouteau, and G. Martinez, “Superconductivity in High Pressure Metallic Phases of Si”, Phys. Rev. Lett. 54, 2375 (1985).

  4. K.J. Chang and M.L. Cohen, “Solid-Solid Phase Transitions and Soft Phonon Modes in Highly Condensed Si”, Phys. Rev. B 31, 7819 (1985).

1984

  1. K.J. Chang and M.L. Cohen, “Structural and electronic properties of the high-pressure hexagonal phases of Si”, Phys. Rev. B 30, 5376 (1984).

1983

  1. K.J. Chang, S.Froyen, and M.L. Cohen, “Electronic Band Structures for Zincblende and Wurtzite CdS”, Phys. Rev. B 28, 4736 (1983).

  2. K.J. Chang, S.Froyen, and M.L. Cohen, “The Electronic Band Structures for Zincblende and Wurtzite BeO”, J. Phys. C 16, 3475 (1983).

1981

  1. K.J. Chang and K.C. Lee, “A New Method of Analysing Critical Behavior of High Temperature Series in a Finite Field”, J. Phys. C 14, 935 (1981).

1980

  1. K.J. Chang and K.C. Lee, “The Critical Behavior of the Maximum Susceptibility Locus”, J. Phys. C13, 2165 (1980).